Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology CT8G4SFS632A.C4FE 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Crucial Technology CT8G4SFS632A.C4FE 8GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Crucial Technology CT8G4SFS632A.C4FE 8GB

需要考虑的原因
Crucial Technology CT8G4SFS632A.C4FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

52 74

左右 -42% 更低的延时
更快的写入速度，GB/s

9.1 2,201.1

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT8G4SFS632A.C4FE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 52
读取速度，GB/s

4,178.4 13.7
写入速度，GB/s

2,201.1 9.1
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

508 2182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston KVR533D2N4 512MB

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Samsung M3 93T5750CZA-CE6 2GB

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Mushkin 991586 2GB

Mushkin 991586 2GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMD16GX4M4C3200C15 4GB

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Samsung M471B5173DB0-YK0 4GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB