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A-DATA Technology DDR3 1600 4GB
SK Hynix HMA851U6DJR6N-XN 4GB

A-DATA Technology DDR3 1600 4GB vs SK Hynix HMA851U6DJR6N-XN 4GB

总分
star star star star star
A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

总分
star star star star star
SK Hynix HMA851U6DJR6N-XN 4GB

SK Hynix HMA851U6DJR6N-XN 4GB

差异 规格 评论

差异

A-DATA Technology DDR3 1600 4GB 需要考虑的原因
A-DATA Technology DDR3 1600 4GB
报告一个错误
SK Hynix HMA851U6DJR6N-XN 4GB 需要考虑的原因
SK Hynix HMA851U6DJR6N-XN 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 41
    左右 -28% 更低的延时
  • 更快的读取速度，GB/s
    15.9 left arrow 14
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1600 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 32
  • 读取速度，GB/s
    14.0 left arrow 15.9
  • 写入速度，GB/s
    8.5 left arrow 10.6
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2324 left arrow 2240

A-DATA Technology DDR3 1600 4GB RAM的比较

A-DATA Technology DDR4 2666 2OZ 4GB
Kingston 9905624-004.A00G 4GB

SK Hynix HMA851U6DJR6N-XN 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905678-042.A00G 8GB
Kingston 9905678-042.A00G 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
SK Hynix HMA851U6DJR6N-XN 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
Micron Technology 18ADF1G72PZ-2G1A1 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
SK Hynix HMA851U6JJR6N-VK 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM
A-DATA Technology DDR4 2400 16GB
A-DATA Technology DDR4 2400 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
Patriot Memory (PDP Systems) PSD416G24002S 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology 78.CAGP7.AZ20B 8GB
Apacer Technology 78.CAGP7.AZ20B 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
Crucial Technology BL16G32C16U4B.M8FB1 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
SK Hynix HMA84GL7MMR4N-TF 32GB
SK Hynix HMA84GL7MMR4N-TF 32GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston ACR26D4S9S8KA-8 8GB
内存RAM