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A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3600C16-8GVKC 8GB

A-DATA Technology DDR3 1866 2OZ 4GB vs G Skill Intl F4-3600C16-8GVKC 8GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
G Skill Intl F4-3600C16-8GVKC 8GB

G Skill Intl F4-3600C16-8GVKC 8GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 26
    左右 19% 更低的延时
G Skill Intl F4-3600C16-8GVKC 8GB 需要考虑的原因
G Skill Intl F4-3600C16-8GVKC 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.3 left arrow 17.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.3 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 26
  • 读取速度，GB/s
    17.8 left arrow 19.3
  • 写入速度，GB/s
    10.0 left arrow 16.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 3723

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-3600C16-8GVKC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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A-DATA Technology DOVF1B163G2G 2GB
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Samsung M379B5273CH0-CH9 4GB
Samsung M379B5273CH0-CH9 4GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
G Skill Intl F4-3600C16-8GVKC 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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G Skill Intl F4-2666C19-8GVR 8GB
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Kingston KHX2400C14S4/8G 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
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内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Samsung V-GeN D4S8GL24A8 8GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-3200C15-16GTZKY 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
内存RAM
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Crucial Technology 16G4UD2400.C16BD1 16GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
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Samsung M471A1K43CB1-CTD 8GB
内存RAM