Samsung M3 78T3354BZ0-CCC 256MB vs G Skill Intl F4-3200C15-16GTZKY 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

G Skill Intl F4-3200C15-16GTZKY 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZKY 16GB

报告一个错误

低于PassMark测试中的延时，ns

18 46

左右 -156% 更低的延时
更快的读取速度，GB/s

20.6 2

测试中的平均数值
更快的写入速度，GB/s

18.6 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C15-16GTZKY 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 18
读取速度，GB/s

2,909.8 20.6
写入速度，GB/s

1,519.2 18.6
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3607

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Team Group Inc. TEAMGROUP-SD4-2133 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Transcend Information AQD-SD4U16GN21-SE 16GB

Transcend Information AQD-SD4U16GN21-SE 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 16ATF2G64AZ-2G1B1 8GB

Kingston 16ATF2G64AZ-2G1B1 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Micron Technology HMA81GU6AFR8N-UH 8GB

Micron Technology HMA81GU6AFR8N-UH 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Crucial Technology BLS8G4D26BFSBK.8FBD 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CMD32GX4M4C3000C15 8GB

Corsair CMD32GX4M4C3000C15 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston ACR24D4S7S8MB-8 8GB

Kingston ACR24D4S7S8MB-8 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston 99U5713-002.A00G 4GB

Kingston 99U5713-002.A00G 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3733C17-16GTZKK 16GB

G Skill Intl F4-3733C17-16GTZKK 16GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Teikon TMA81GS6CJR8N-VKSC 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston HP37D4U1S8ME-16X 16GB

Kingston HP37D4U1S8ME-16X 16GB