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A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-4600C18-8GTZR 8GB

A-DATA Technology DDR3 1866 2OZ 4GB vs G Skill Intl F4-4600C18-8GTZR 8GB

总分
star star star star star
A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分
star star star star star
G Skill Intl F4-4600C18-8GTZR 8GB

G Skill Intl F4-4600C18-8GTZR 8GB

差异 规格 评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 22
    左右 5% 更低的延时
G Skill Intl F4-4600C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4600C18-8GTZR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.3 left arrow 17.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    21 left arrow 22
  • 读取速度，GB/s
    17.8 left arrow 19.3
  • 写入速度，GB/s
    10.0 left arrow 17.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2771 left arrow 3653

A-DATA Technology DDR3 1866 2OZ 4GB RAM的比较

A-DATA Technology DDR3 1600G 4GB
G Skill Intl F4-2133C15-8GRB 8GB

G Skill Intl F4-4600C18-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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SK Hynix HMT325S6BFR8C-H9 2GB
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内存RAM
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology DDR3 1866 2OZ 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM
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内存RAM
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内存RAM
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King Tiger Technology Tigo-2400MHz-4G 4GB
King Tiger Technology Tigo-2400MHz-4G 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK64GX4M4E3200C16 16GB
Corsair CMK64GX4M4E3200C16 16GB
内存RAM
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Samsung M3 78T3354BZ0-CCC 256MB
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G Skill Intl F4-2800C16-8GVG 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
Crucial Technology CT16G4SFRA32A.C8FB 16GB
内存RAM
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Samsung M471A5244CB0-CWE 4GB
Corsair CM4X32GE2666C18S2 32GB
Corsair CM4X32GE2666C18S2 32GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
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Corsair CM4X4GF2666C16K4 4GB
内存RAM
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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM