Samsung M471B5273CH0-CH9 4GB vs Corsair CMW64GX4M2E3200C16 32GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Corsair CMW64GX4M2E3200C16 32GB

Corsair CMW64GX4M2E3200C16 32GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Corsair CMW64GX4M2E3200C16 32GB

需要考虑的原因
Corsair CMW64GX4M2E3200C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 48

左右 -55% 更低的延时
更快的读取速度，GB/s

16.7 8.9

测试中的平均数值
更快的写入速度，GB/s

14.5 5.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Corsair CMW64GX4M2E3200C16 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 31
读取速度，GB/s

8.9 16.7
写入速度，GB/s

5.9 14.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1420 3598

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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G Skill Intl F5-5600J4040C16G 16GB

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Kingston KHX2666C16D4/4G 4GB

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Crucial Technology CT16G4SFD824A.M16FA 16GB

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Kingston KHX318C10FR/8G 8GB

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Corsair CMX8GX3M2A1600C11 4GB

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Crucial Technology BLS8G4D240FSE.16FAR 8GB

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Kingston HP687515-H66-MCN 4GB

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G Skill Intl F4-2400C14-16GVK 16GB

G Skill Intl F4-2400C14-16GVK 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Crucial Technology CT8G4DFD824A.M16FB 8GB

Kingston 9905471-001.A01LF 2GB

Kingston 9905471-001.A01LF 2GB

INTENSO M418039 8GB

INTENSO M418039 8GB