A-DATA Technology DDR3 1866 2OZ 4GB vs Kingston 9905713-028.A00G 8GB

总分

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分

Kingston 9905713-028.A00G 8GB

Kingston 9905713-028.A00G 8GB

差异规格评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 31

左右 32% 更低的延时
更快的读取速度，GB/s

17.8 16.3

测试中的平均数值

Kingston 9905713-028.A00G 8GB

需要考虑的原因
Kingston 9905713-028.A00G 8GB

报告一个错误

更快的写入速度，GB/s

12.3 10.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1866 2OZ 4GB

Kingston 9905713-028.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 31
读取速度，GB/s

17.8 16.3
写入速度，GB/s

10.0 12.3
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2771 3111

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Teikon TMA81GS6AFR8N-UHSC 8GB

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Samsung M471B5273CH0-CH9 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

Team Group Inc. TEAMGROUP-UD4-2666 8GB

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Samsung M393B1G70BH0-CK0 8GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Dust Leopard DDR4-2400 C17 4GB 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

SK Hynix HMAA1GS6CJR6N-XN 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston HP26D4U6D8ME-16X 16GB

Kingston HP26D4U6D8ME-16X 16GB