A-DATA Technology DDR3 1866 2OZ 4GB vs Samsung M378A4G43MB1-CTD 32GB

总分

A-DATA Technology DDR3 1866 2OZ 4GB

A-DATA Technology DDR3 1866 2OZ 4GB

总分

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

差异规格评论

差异

A-DATA Technology DDR3 1866 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR3 1866 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 38

左右 45% 更低的延时
更快的读取速度，GB/s

17.8 15.4

测试中的平均数值

Samsung M378A4G43MB1-CTD 32GB

需要考虑的原因
Samsung M378A4G43MB1-CTD 32GB

报告一个错误

更快的写入速度，GB/s

12.6 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DDR3 1866 2OZ 4GB

Samsung M378A4G43MB1-CTD 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 38
读取速度，GB/s

17.8 15.4
写入速度，GB/s

10.0 12.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2771 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.CAGQE.C750B 8GB

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Kingston KVR533D2N4 512MB

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Micron Technology 16A6A2G64HZ-2-2E1 16GB

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Nanya Technology NT2GC64B8HC0NS-CG 2GB

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Kingston 99U5663-006.A00G 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMG32GX4M2D3600C18 16GB

Corsair CMG32GX4M2D3600C18 16GB

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SK Hynix HMA81GU6DJR8N-WM 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Corsair CMW32GX4M2C3000C15 16GB