A-DATA Technology DDR4 2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

A-DATA Technology DDR4 2666 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

总分

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

差异规格评论

差异

A-DATA Technology DDR4 2666 8GB

需要考虑的原因
A-DATA Technology DDR4 2666 8GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 32

左右 -23% 更低的延时
更快的读取速度，GB/s

16.2 15.5

测试中的平均数值
更快的写入速度，GB/s

12.6 11.8

测试中的平均数值

规格

完整的技术规格清单

A-DATA Technology DDR4 2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N-VK 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 26
读取速度，GB/s

15.5 16.2
写入速度，GB/s

11.8 12.6
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2968 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Corsair CML8GX3M2A1866C9 4GB

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Corsair CMD32GX4M4A2666C15 8GB

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A-DATA Technology AM2P24HC4R1-BUPS 4GB

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G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3333C16-8GTZB 8GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

A-DATA Technology AO1P29KC8T1-BY9SSB 8GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

Micron Technology 4ATF51264AZ-3G2J1 4GB