A-DATA Technology DDR4 2666 8GB vs Samsung M471A2K43CB1-CRC 16GB

总分

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

总分

Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异规格评论

差异

A-DATA Technology DDR4 2666 8GB

需要考虑的原因
A-DATA Technology DDR4 2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 38

左右 16% 更低的延时
更快的读取速度，GB/s

15.5 13.8

测试中的平均数值
更快的写入速度，GB/s

11.8 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Samsung M471A2K43CB1-CRC 16GB

需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB

报告一个错误

规格

完整的技术规格清单

A-DATA Technology DDR4 2666 8GB

Samsung M471A2K43CB1-CRC 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

32 38
读取速度，GB/s

15.5 13.8
写入速度，GB/s

11.8 9.1
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2968 2404

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMWX8GD3600C18W4 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3200C15-8GTZ 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston KCRXJ6-MIE 16GB

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Essencore Limited IM48GU88N24-FFFHA0 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

Kingston HP26D4U9S8ME-8X 8GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Corsair CMH32GX4M2D3600C18 16GB

Corsair CMH32GX4M2D3600C18 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

G Skill Intl F4-3333C16-16GVK 16GB

G Skill Intl F4-3333C16-16GVK 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

AMD R748G2400U2S 8GB

AMD R748G2400U2S 8GB