A-DATA Technology DOVF1B163G2G 2GB vs Corsair CMK16GX4M2B3000C15 8GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Corsair CMK16GX4M2B3000C15 8GB

Corsair CMK16GX4M2B3000C15 8GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 17.9

测试中的平均数值

Corsair CMK16GX4M2B3000C15 8GB

需要考虑的原因
Corsair CMK16GX4M2B3000C15 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 56

左右 -93% 更低的延时
更快的写入速度，GB/s

13.8 1,925.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMK16GX4M2B3000C15 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 29
读取速度，GB/s

4,315.2 17.9
写入速度，GB/s

1,925.7 13.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

658 3336

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW32GX4M2Z3600C14 16GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Crucial Technology CT8G4DFRA266.M4FE 8GB

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Samsung M391B5673EH1-CH9 2GB

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Apacer Technology 78.CAGR4.DFC0B 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Avant Technology W641GU42J5213N3 8GB

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Team Group Inc. TEAMGROUP-SD4-3200 16GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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G Skill Intl F4-3600C16-8GTZSW 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

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Samsung T471A1K43CB1-CRC 8GB

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Kingston CBD26D4U9S8ME-8 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3000C16-8GRS 8GB

G Skill Intl F4-3000C16-8GRS 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9905702-002.A00G 8GB

Kingston 9905702-002.A00G 8GB