A-DATA Technology DOVF1B163G2G 2GB vs Crucial Technology CT16G4SFD8266.C8FBD1 16GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 18

测试中的平均数值

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8266.C8FBD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 56

左右 -155% 更低的延时
更快的写入速度，GB/s

14.3 1,925.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 22
读取速度，GB/s

4,315.2 18.0
写入速度，GB/s

1,925.7 14.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

658 3430

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFD824A.C16FE 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Samsung M378A5244CB0-CTD 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston HP24D4U7S8MH-8 8GB

Kingston HP24D4U7S8MH-8 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

INTENSO M418039 8GB

INTENSO M418039 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Kingston KHX2666C16S4/16G 16GB

Kingston KHX2666C16S4/16G 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Avant Technology W642GU44J2320NC 16GB

Avant Technology W642GU44J2320NC 16GB