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A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C17-16GTZRB 16GB

A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-4000C17-16GTZRB 16GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.2
    测试中的平均数值
G Skill Intl F4-4000C17-16GTZRB 16GB 需要考虑的原因
G Skill Intl F4-4000C17-16GTZRB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 56
    左右 -87% 更低的延时
  • 更快的写入速度，GB/s
    16.9 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C17-16GTZRB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 30
  • 读取速度，GB/s
    4,315.2 left arrow 20.2
  • 写入速度，GB/s
    1,925.7 left arrow 16.9
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    658 left arrow 3844

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

G Skill Intl F4-4000C17-16GTZRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C17-16GTZRB 16GB
G Skill Intl F4-4000C17-16GTZRB 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Mushkin 99[2/7/4]205[F/T] 8GB
Mushkin 99[2/7/4]205[F/T] 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
Teikon TMA851S6CJR6N-VKSC 4GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
A-DATA Technology AM1L16BC8R2-B1QS 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
G Skill Intl F4-3200C16-4GVKB 4GB
G Skill Intl F4-3200C16-4GVKB 4GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
Crucial Technology BLS4G4S240FSD.8FAR 4GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston 9965669-025.A00G 8GB
Kingston 9965669-025.A00G 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Apacer Technology 78.D2GFH.4030B 16GB
Apacer Technology 78.D2GFH.4030B 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston 9965589-008.D01G 8GB
Kingston 9965589-008.D01G 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFRA266.M4FE 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3000C16-8GTZN 8GB
G Skill Intl F4-3000C16-8GTZN 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM