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A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C18-8GTZ 8GB

A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-4000C18-8GTZ 8GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZ 8GB

G Skill Intl F4-4000C18-8GTZ 8GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.1
    测试中的平均数值
G Skill Intl F4-4000C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 56
    左右 -124% 更低的延时
  • 更快的写入速度，GB/s
    16.7 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 25
  • 读取速度，GB/s
    4,315.2 left arrow 19.1
  • 写入速度，GB/s
    1,925.7 left arrow 16.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    658 left arrow 3845

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

G Skill Intl F4-4000C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905711-007.A00G 4GB
Kingston 9905711-007.A00G 4GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
G Skill Intl F4-3000C15-8GTZB 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C14-16GTRG 16GB
G Skill Intl F4-3600C14-16GTRG 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-4000C16-8GVK 8GB
G Skill Intl F4-4000C16-8GVK 8GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Essencore Limited IM48GU48N24-FFFHM 8GB
Essencore Limited IM48GU48N24-FFFHM 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4000C18-8GTZ 8GB
G Skill Intl F4-4000C18-8GTZ 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-3600C17-8GTRS 8GB
G Skill Intl F4-3600C17-8GTRS 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston XRMWRN-HYA 16GB
Kingston XRMWRN-HYA 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston HP32D4U8S8HD-8X 8GB
Kingston HP32D4U8S8HD-8X 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
Kingmax Semiconductor GSAF62F-D8---------- 4GB
内存RAM
Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
Crucial Technology CT4G4DFS8213.C8FDD2 4GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM