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A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4800C18-8GTRG 8GB

A-DATA Technology DOVF1B163G2G 2GB vs G Skill Intl F4-4800C18-8GTRG 8GB

总分
star star star star star
A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分
star star star star star
G Skill Intl F4-4800C18-8GTRG 8GB

G Skill Intl F4-4800C18-8GTRG 8GB

差异 规格 评论

差异

A-DATA Technology DOVF1B163G2G 2GB 需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.7
    测试中的平均数值
G Skill Intl F4-4800C18-8GTRG 8GB 需要考虑的原因
G Skill Intl F4-4800C18-8GTRG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 56
    左右 -93% 更低的延时
  • 更快的写入速度，GB/s
    15.4 left arrow 1,925.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 29
  • 读取速度，GB/s
    4,315.2 left arrow 16.7
  • 写入速度，GB/s
    1,925.7 left arrow 15.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    658 left arrow 3552

A-DATA Technology DOVF1B163G2G 2GB RAM的比较

ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB

G Skill Intl F4-4800C18-8GTRG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-4800C18-8GTRG 8GB
G Skill Intl F4-4800C18-8GTRG 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Essencore Limited KD48GU88A-26N1600 8GB
Essencore Limited KD48GU88A-26N1600 8GB
内存RAM
Unifosa Corporation GU502203EP0201 1GB
Unifosa Corporation GU502203EP0201 1GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Apacer Technology GD2.1527WT.001 8GB
Apacer Technology GD2.1527WT.001 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Corsair CM4X8GF2133C15S2 8GB
Corsair CM4X8GF2133C15S2 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston KHX2400C15S4/16G 16GB
Kingston KHX2400C15S4/16G 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMR16GX4M2A2666C16 8GB
Corsair CMR16GX4M2A2666C16 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
内存RAM
Kingston 9905469-136.A00LF 4GB
Kingston 9905469-136.A00LF 4GB
Kingston KNWMX1-ETB 4GB
Kingston KNWMX1-ETB 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Mushkin 99[2/7/4]197F 8GB
Mushkin 99[2/7/4]197F 8GB
内存RAM