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A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
比较
A-DATA Technology DOVF1B163G2G 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
总分
A-DATA Technology DOVF1B163G2G 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB
报告一个错误
更快的读取速度,GB/s
4
10.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
报告一个错误
低于PassMark测试中的延时,ns
35
56
左右 -60% 更低的延时
更快的写入速度,GB/s
8.0
1,925.7
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
56
35
读取速度,GB/s
4,315.2
10.3
写入速度,GB/s
1,925.7
8.0
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
658
2327
A-DATA Technology DOVF1B163G2G 2GB RAM的比较
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
A-DATA Technology AD73I1C1674EV 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology DOVF1B163G2G 2GB
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报告一个错误
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Bug description
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