A-DATA Technology DOVF1B163G2G 2GB vs Kingston KHX2666C15D4/4G 4GB

总分

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

总分

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB

差异规格评论

差异

A-DATA Technology DOVF1B163G2G 2GB

需要考虑的原因
A-DATA Technology DOVF1B163G2G 2GB

报告一个错误

更快的读取速度，GB/s

4 17.1

测试中的平均数值

Kingston KHX2666C15D4/4G 4GB

需要考虑的原因
Kingston KHX2666C15D4/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 56

左右 -75% 更低的延时
更快的写入速度，GB/s

13.0 1,925.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DOVF1B163G2G 2GB

Kingston KHX2666C15D4/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 32
读取速度，GB/s

4,315.2 17.1
写入速度，GB/s

1,925.7 13.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

658 2929

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston 9905678-027.A00G 8GB

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Samsung M391B5673EH1-CH9 2GB

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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

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Corsair CMSO4GX3M1C1600C11 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Samsung M393A1K43BB1-CTD 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2Z3600C18 8GB

Corsair CMK16GX4M2Z3600C18 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Mushkin 991586 2GB

Mushkin 991586 2GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB