Kingston ACR256X64D3S1333C9 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Kingston ACR256X64D3S1333C9 2GB vs Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

报告一个错误

更快的读取速度，GB/s

15.4 11.9

测试中的平均数值
更快的写入速度，GB/s

12.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

11.9 15.4
写入速度，GB/s

8.5 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1620 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.CAGMR.40C0B 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Ramaxel Technology RMUA5110MB78HAF-2400 8GB

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Corsair CMSX32GX4M2A2666C18 16GB

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A-DATA Technology DDR4 2666 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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Micron Technology 4ATF1G64HZ-3G2B2 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB