Crucial Technology CT51264BD1339.M16F 4GB vs G Skill Intl F4-2400C17-4GVR 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

G Skill Intl F4-2400C17-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GVR 4GB

报告一个错误

更快的读取速度，GB/s

15.2 12.1

测试中的平均数值
更快的写入速度，GB/s

12.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-2400C17-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 25
读取速度，GB/s

12.1 15.2
写入速度，GB/s

8.6 12.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 2740

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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SK Hynix HYMP164U64CP6-Y5 512MB

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G Skill Intl F4-3400C16-8GSXW 8GB

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Corsair CMD16GX4M4B3600C18 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

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Micron Technology 4ATF51264HZ-2G6E1 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Gold Key Technology Co Ltd NMGD416E82-4400G 16GB

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Kingston 9905598-009.A00G 8GB

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Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

G Skill Intl F4-3200C14-16GTZ 16GB

G Skill Intl F4-3200C14-16GTZ 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

Crucial Technology CT25664BA1339.D8FE 2GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Kingston KHX2666C16S4/32G 32GB

Kingston KHX2666C16S4/32G 32GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB