A-DATA Technology DQKD1A08 1GB vs Corsair CMK16GX4M2B4266C19 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 15.7

测试中的平均数值

Corsair CMK16GX4M2B4266C19 8GB

需要考虑的原因
Corsair CMK16GX4M2B4266C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 52

左右 -44% 更低的延时
更快的写入速度，GB/s

12.8 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Corsair CMK16GX4M2B4266C19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 36
读取速度，GB/s

2,614.5 15.7
写入速度，GB/s

1,145.9 12.8
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQKD1A08 1GB

Corsair CMK16GX4M2B4266C19 8GB

Corsair CMK16GX4M2B4266C19 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Samsung M471A5244CB0-CRC 4GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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A-DATA Technology AO1E34RCSV1-BF1S 16GB

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Kingston 9905704-007.A00G 4GB

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Kingston KF552C40-16 16GB

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Samsung M393A2K43DB3-CWE 16GB

Samsung M393A2K43DB3-CWE 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Corsair CMK128GX4M8X3600C18 16GB

Corsair CMK128GX4M8X3600C18 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C16-32GVK 32GB

G Skill Intl F4-3200C16-32GVK 32GB