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A-DATA Technology DQKD1A08 1GB
Samsung M4 70T2864AZ3-CE6 1GB

A-DATA Technology DQKD1A08 1GB vs Samsung M4 70T2864AZ3-CE6 1GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Samsung M4 70T2864AZ3-CE6 1GB

Samsung M4 70T2864AZ3-CE6 1GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    52 left arrow 62
    左右 16% 更低的延时
Samsung M4 70T2864AZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2864AZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    1,388.0 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    5300 left arrow 4200
    左右 1.26 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Samsung M4 70T2864AZ3-CE6 1GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR2
  • PassMark中的延时，ns
    52 left arrow 62
  • 读取速度，GB/s
    2,614.5 left arrow 3,575.6
  • 写入速度，GB/s
    1,145.9 left arrow 1,388.0
  • 内存带宽，mbps
    4200 left arrow 5300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    409 left arrow 518

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB

Samsung M4 70T2864AZ3-CE6 1GB RAM的比较

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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