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A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFRA266.C8FB 16GB

A-DATA Technology DQKD1A08 1GB vs Crucial Technology CT16G4SFRA266.C8FB 16GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Crucial Technology CT16G4SFRA266.C8FB 16GB

Crucial Technology CT16G4SFRA266.C8FB 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14.3
    测试中的平均数值
Crucial Technology CT16G4SFRA266.C8FB 16GB 需要考虑的原因
Crucial Technology CT16G4SFRA266.C8FB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 52
    左右 -27% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 4200
    左右 5.07 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFRA266.C8FB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 41
  • 读取速度，GB/s
    2,614.5 left arrow 14.3
  • 写入速度，GB/s
    1,145.9 left arrow 11.1
  • 内存带宽，mbps
    4200 left arrow 21300
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    409 left arrow 2656

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Crucial Technology CT16G4SFRA266.C8FB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5273CH0-CH9 4GB
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Samsung M395T2863QZ4-CF76 1GB
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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内存RAM
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G Skill Intl F3-2800C12-8GTXDG 8GB
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM