A-DATA Technology DQKD1A08 1GB vs G Skill Intl F4-3600C19-8GVSB 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 19.2

测试中的平均数值

G Skill Intl F4-3600C19-8GVSB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GVSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 52

左右 -68% 更低的延时
更快的写入速度，GB/s

17.8 1,145.9

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3600C19-8GVSB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 31
读取速度，GB/s

2,614.5 19.2
写入速度，GB/s

1,145.9 17.8
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

409 3895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471B1G73QH0-YK0 8GB

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G Skill Intl F4-4000C18-16GTZR 16GB

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Micron Technology 4ATF51264HZ-2G3B2 4GB

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Samsung M471B5273CH0-CH9 4GB

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Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

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Kingston 9905403-061.A00LF 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB

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Corsair CML8GX3M2A1866C9 4GB

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Corsair CMK8GX4M2B3600C18 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Micron Technology 8ATF1G64AZ-2G3E1 8GB

Samsung M393B2G70BH0-YK0 16GB

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Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-3600C18-8GTZR 8GB

G Skill Intl F4-3600C18-8GTZR 8GB