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A-DATA Technology DQKD1A08 1GB
Gloway International (HK) STK2400C15-16GB 16GB

A-DATA Technology DQKD1A08 1GB vs Gloway International (HK) STK2400C15-16GB 16GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17
    测试中的平均数值
Gloway International (HK) STK2400C15-16GB 16GB 需要考虑的原因
Gloway International (HK) STK2400C15-16GB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 52
    左右 -126% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Gloway International (HK) STK2400C15-16GB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 23
  • 读取速度，GB/s
    2,614.5 left arrow 17.0
  • 写入速度，GB/s
    1,145.9 left arrow 12.5
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3098

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Gloway International (HK) STK2400C15-16GB 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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