A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

A-DATA Technology DQKD1A08 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 11.4

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 52

左右 -93% 更低的延时
更快的写入速度，GB/s

11.8 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 27
读取速度，GB/s

2,614.5 11.4
写入速度，GB/s

1,145.9 11.8
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 2062

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905678-029.A00G 8GB

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Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

G Skill Intl F4-3200C16-16GVK 16GB

G Skill Intl F4-3200C16-16GVK 16GB

Kingston KHX2400C11D3/4GX 4GB

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Kingston 9965640-035.C00G 32GB

Kingston 9965640-035.C00G 32GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMW16GX4M2D3000C16 8GB

Corsair CMW16GX4M2D3000C16 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Apacer Technology 78.B1GQB.4010B 4GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston 9905624-014.A00G 4GB

Kingston 9905624-014.A00G 4GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Panram International Corporation PUD42400C154G4NJK 4GB

Panram International Corporation PUD42400C154G4NJK 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Crucial Technology CT4G4DFS8213.8FA11 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Corsair CMR64GX4M4C3000C15 16GB

Corsair CMR64GX4M4C3000C15 16GB

AMD R7S48G2400U2S 8GB

AMD R7S48G2400U2S 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB