A-DATA Technology DQKD1A08 1GB vs Kingston KMKYF9-MIH 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 13

测试中的平均数值

Kingston KMKYF9-MIH 8GB

需要考虑的原因
Kingston KMKYF9-MIH 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 52

左右 -41% 更低的延时
更快的写入速度，GB/s

9.4 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Kingston KMKYF9-MIH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 37
读取速度，GB/s

2,614.5 13.0
写入速度，GB/s

1,145.9 9.4
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 2187

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-8GTZR 8GB

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Crucial Technology BLS8G4D240FSA.16FAD 8GB

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PNY Electronics PNY 2GB

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Crucial Technology BLS8G4D32AESTK.M8FE1 8GB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

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takeMS International AG TMS2GB264D082-805G 2GB

Corsair CMT64GX4M8C3200C16 8GB

Corsair CMT64GX4M8C3200C16 8GB

Kingston 99U5471-025.A00LF 4GB

Kingston 99U5471-025.A00LF 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M471B1G73BH0-YK0 8GB

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Samsung M471B1G73EB0-YK0 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Apacer Technology 78.CAGP7.DFW0C 8GB

Apacer Technology 78.CAGP7.DFW0C 8GB