A-DATA Technology DQKD1A08 1GB vs Micron Technology 8ATF1G64HZ-2G3B2 8GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 13.4

测试中的平均数值

Micron Technology 8ATF1G64HZ-2G3B2 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

40 52

左右 -30% 更低的延时
更快的写入速度，GB/s

10.8 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 40
读取速度，GB/s

2,614.5 13.4
写入速度，GB/s

1,145.9 10.8
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 2495

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Kingston KHX2800C14D4/8GX 8GB

Kingston KHX2800C14D4/8GX 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Crucial Technology CT16G4SFD8266.C16FJ 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Crucial Technology BL8G30C15U4W.M8FE1 8GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Crucial Technology BLS8G4D30CESTK.8FD 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Kingston KH280C14D4/8X 8GB

Kingston KH280C14D4/8X 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9905701-141.A00G 16GB

Kingston 9905701-141.A00G 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

G Skill Intl F4-2133C15-8GRS 8GB

G Skill Intl F4-2133C15-8GRS 8GB