A-DATA Technology DQKD1A08 1GB vs Samsung M393A4K40BB2-CTD 32GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Samsung M393A4K40BB2-CTD 32GB

Samsung M393A4K40BB2-CTD 32GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 11.7

测试中的平均数值

Samsung M393A4K40BB2-CTD 32GB

需要考虑的原因
Samsung M393A4K40BB2-CTD 32GB

报告一个错误

低于PassMark测试中的延时，ns

44 52

左右 -18% 更低的延时
更快的写入速度，GB/s

9.0 1,145.9

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Samsung M393A4K40BB2-CTD 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 44
读取速度，GB/s

2,614.5 11.7
写入速度，GB/s

1,145.9 9.0
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

409 2727

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64HZ-3G2J1 16GB

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Kingston 9905403-447.A00LF 4GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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Corsair CMU64GX4M4C3000C15 16GB

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Corsair CMT32GX5M2X5600C36 16GB

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Kingston ACR512X64D3S13C9G 4GB

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G Skill Intl F4-3000C15-4GTZ 4GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Crucial Technology BLS4G4D240FSA.M8F 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Micron Technology 72ASS8G72LZ-2G3B2 64GB