A-DATA Technology DQKD1A08 1GB vs SK Hynix V-GeN D4H4GL30A8TX5 4GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

SK Hynix V-GeN D4H4GL30A8TX5 4GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

低于PassMark测试中的延时，ns

52 73

左右 29% 更低的延时
更快的读取速度，GB/s

2 15.8

测试中的平均数值

SK Hynix V-GeN D4H4GL30A8TX5 4GB

需要考虑的原因
SK Hynix V-GeN D4H4GL30A8TX5 4GB

报告一个错误

更快的写入速度，GB/s

8.4 1,145.9

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

SK Hynix V-GeN D4H4GL30A8TX5 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 73
读取速度，GB/s

2,614.5 15.8
写入速度，GB/s

1,145.9 8.4
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

409 1822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BLS8G4D240FSE.16FAR 8GB

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Samsung M378B5773CH0-CH9 2GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Corsair CMR16GX4M2Z3200C16 8GB

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Kingston HX432C15PB3/16G 16GB

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Kingston CBD26D4U9S8ME-8 8GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Kingston 9965525-018.A00LF 4GB

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Crucial Technology CT16G4DFD824A.C16FE 16GB

Crucial Technology CT16G4DFD824A.C16FE 16GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

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Ramaxel Technology RMSA3330ME88HCF-3200 32GB

Ramaxel Technology RMSA3330ME88HCF-3200 32GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Kingston KHX2666C13D4/4GX 4GB

Kingston KHX2666C13D4/4GX 4GB