A-DATA Technology DQVE1908 512MB vs Corsair CM4X16GC3200C16K2E 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.3

测试中的平均数值

Corsair CM4X16GC3200C16K2E 16GB

需要考虑的原因
Corsair CM4X16GC3200C16K2E 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 66

左右 -106% 更低的延时
更快的写入速度，GB/s

13.4 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Corsair CM4X16GC3200C16K2E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 32
读取速度，GB/s

2,775.5 17.3
写入速度，GB/s

1,557.9 13.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 3422

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Samsung M378B5773CH0-CH9 2GB

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Corsair CMK16GX4M2Z3466C16 8GB

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Samsung M393B2G70BH0-YK0 16GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Neo Forza NMUD480E82-3600 8GB

Neo Forza NMUD480E82-3600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB