A-DATA Technology DQVE1908 512MB vs Corsair CM4X4GD3000C15K4 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 17.7

测试中的平均数值

Corsair CM4X4GD3000C15K4 4GB

需要考虑的原因
Corsair CM4X4GD3000C15K4 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 66

左右 -214% 更低的延时
更快的写入速度，GB/s

13.5 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Corsair CM4X4GD3000C15K4 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 21
读取速度，GB/s

2,775.5 17.7
写入速度，GB/s

1,557.9 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Kingston HP24D4R7D4MAM-32 32GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Kingston KVT8FP-HYC 4GB

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Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB

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Kingston HX316C10F/8 8GB

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Smart Modular SF464128CK8I6GKSEG 4GB