A-DATA Technology DQVE1908 512MB vs Crucial Technology CT8G4SFD8213.C16FDD2 8GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 15.3

测试中的平均数值

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FDD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 66

左右 -113% 更低的延时
更快的写入速度，GB/s

12.1 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Crucial Technology CT8G4SFD8213.C16FDD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 31
读取速度，GB/s

2,775.5 15.3
写入速度，GB/s

1,557.9 12.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 2539

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBE21UE8ACUA-8G-E 2GB

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SK Hynix HMA851U6DJR6N-WM 4GB

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Kingmax Semiconductor GLNG43F-18---------- 8GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMW32GX4M4A2666C16 8GB

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Samsung M393B5170FH0-CK0 4GB

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Kingston X74R9W-MIE 8GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

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G Skill Intl F4-4400C16-8GTZR 8GB