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A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2666C19-8GNT 8GB

A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-2666C19-8GNT 8GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
G Skill Intl F4-2666C19-8GNT 8GB

G Skill Intl F4-2666C19-8GNT 8GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.7
    测试中的平均数值
G Skill Intl F4-2666C19-8GNT 8GB 需要考虑的原因
G Skill Intl F4-2666C19-8GNT 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 66
    左右 -113% 更低的延时
  • 更快的写入速度，GB/s
    13.6 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2666C19-8GNT 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 31
  • 读取速度，GB/s
    2,775.5 left arrow 16.7
  • 写入速度，GB/s
    1,557.9 left arrow 13.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3199

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

G Skill Intl F4-2666C19-8GNT 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology DQKD1A08 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
Catalyst 256NU8 256MB
Catalyst 256NU8 256MB
A-DATA Technology DDR3 1866 8GB
A-DATA Technology DDR3 1866 8GB
内存RAM
Corsair CMSX8GX3M2B1600C9 4GB
Corsair CMSX8GX3M2B1600C9 4GB
Corsair CMSX8GX3M2B1600C9 4GB
Corsair CMSX8GX3M2B1600C9 4GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Kingston 9905625-066.A00G 16GB
Kingston 9905625-066.A00G 16GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-2666C16-8GRB 8GB
G Skill Intl F4-2666C16-8GRB 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMT64GX4M2C3600C18 32GB
Corsair CMT64GX4M2C3600C18 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M4B3000C14 4GB
Corsair CMD16GX4M4B3000C14 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
V-GEN D4M8GL26A8TS6 8GB
V-GEN D4M8GL26A8TS6 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston MSI24D4S7S8S8-8 8GB
Kingston MSI24D4S7S8S8-8 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
A-DATA Technology DDR4 2800 2OZ 4GB
A-DATA Technology DDR4 2800 2OZ 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905678-005.A00G 8GB
Kingston 9905678-005.A00G 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD32GX4M2B3466C16 16GB
Corsair CMD32GX4M2B3466C16 16GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM