A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3600C14-16GVK 16GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

G Skill Intl F4-3600C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 66

左右 -175% 更低的延时
更快的读取速度，GB/s

21.7 2

测试中的平均数值
更快的写入速度，GB/s

19.2 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C14-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 24
读取速度，GB/s

2,775.5 21.7
写入速度，GB/s

1,557.9 19.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 4349

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C14-16GVK 16GB

G Skill Intl F4-3600C14-16GVK 16GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMSX64GX4M4A2400C16 16GB

Corsair CMSX64GX4M4A2400C16 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Kingston 9905678-044.A00G 8GB

Kingston 9905678-044.A00G 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Team Group Inc. TEAMGROUP-UD4-2800 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

Crucial Technology BLS8G4D26BFSEK.8FD 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Panram International Corporation PUD43000C168G2NJR 8GB

Panram International Corporation PUD43000C168G2NJR 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

King Tiger Technology Tigo-2400MHz-8G 8GB

King Tiger Technology Tigo-2400MHz-8G 8GB