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Avant Technology F6451U64F9333G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Avant Technology F6451U64F9333G 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

总分
star star star star star
Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB

差异 规格 评论

差异

Avant Technology F6451U64F9333G 4GB 需要考虑的原因
Avant Technology F6451U64F9333G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 56
    左右 52% 更低的延时
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.1 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Avant Technology F6451U64F9333G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 56
  • 读取速度，GB/s
    12.8 left arrow 20.1
  • 写入速度，GB/s
    6.7 left arrow 10.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2045 left arrow 2455

Avant Technology F6451U64F9333G 4GB RAM的比较

Samsung F6451U64F9333G 4GB
G Skill Intl F4-3600C19-16GTRG 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CMK16GX4M2B3200C14 8GB
Corsair CMK16GX4M2B3200C14 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
Crucial Technology CT8G4DFS8266.M8FH 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston MSI24D4S7S8S8-8 8GB
Kingston MSI24D4S7S8S8-8 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Ramaxel Technology RMUA5110MB78HAF2400 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
Micron Technology 4ATF51264AZ-2G6E1 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK32GX4M2A2666C16 16GB
Corsair CMK32GX4M2A2666C16 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-5066C20-8GVK 8GB
G Skill Intl F4-5066C20-8GVK 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Corsair CMT8GX3M2A2000C9 4GB
Corsair CMT8GX3M2A2000C9 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Kingston 9905624-022.A00G 8GB
内存RAM