Avant Technology F6451U64F9333G 4GB vs Samsung F6451U64F9333G 4GB

总分

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

总分

Samsung F6451U64F9333G 4GB

Samsung F6451U64F9333G 4GB

差异规格评论

差异

Avant Technology F6451U64F9333G 4GB

需要考虑的原因
Avant Technology F6451U64F9333G 4GB

报告一个错误

更快的读取速度，GB/s

12.8 9.1

测试中的平均数值
更快的写入速度，GB/s

6.7 4.3

测试中的平均数值

Samsung F6451U64F9333G 4GB

需要考虑的原因
Samsung F6451U64F9333G 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时

规格

完整的技术规格清单

Avant Technology F6451U64F9333G 4GB

Samsung F6451U64F9333G 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

27 26
读取速度，GB/s

12.8 9.1
写入速度，GB/s

6.7 4.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2045 1333

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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