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Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
比较
Samsung 1600 CL10 Series 8GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB
总分
Samsung 1600 CL10 Series 8GB
总分
Micron Technology 9ASF51272PZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
53
左右 53% 更低的延时
更快的读取速度,GB/s
16.1
10.1
测试中的平均数值
更快的写入速度,GB/s
10.1
8.0
测试中的平均数值
需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB
报告一个错误
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
53
读取速度,GB/s
16.1
10.1
写入速度,GB/s
10.1
8.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2764
2319
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272PZ-2G3B1 4GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT25664BA1339.M8FK 2GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Avant Technology F6451U64F9333G 4GB
Samsung F6451U64F9333G 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Kingston 9905584-016.A00LF 4GB
A-DATA Technology AO1P32NC8T1-BCIS 8GB
Kingston KHX1600C9D3/4G 4GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CM4B8G1J2800K14K 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2B3333C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C15-8GFT 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
PNY Electronics PNY 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-3600C18-32GTZR 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-4GIS 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston 9905678-156.A00G 8GB
报告一个错误
×
Bug description
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