Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 9ASF51272PZ-2G3B1 4GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Micron Technology 9ASF51272PZ-2G3B1 4GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 53

左右 49% 更低的延时
更快的读取速度，GB/s

16.7 10.1

测试中的平均数值
更快的写入速度，GB/s

11.8 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Micron Technology 9ASF51272PZ-2G3B1 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G3B1 4GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 9ASF51272PZ-2G3B1 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 53
读取速度，GB/s

16.7 10.1
写入速度，GB/s

11.8 8.0
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

Crucial Technology CT16G4DFD8213.C16FAD 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Panram International Corporation W4N2666PS-8G 8GB

Panram International Corporation W4N2666PS-8G 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-3600C16-8GTZ 8GB

G Skill Intl F4-3600C16-8GTZ 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

G Skill Intl F4-4600C19-8GTZSWC 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Avant Technology J642GU44J2320ND 16GB

Avant Technology J642GU44J2320ND 16GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Crucial Technology BL8G24C16U4B.8FD 8GB

Corsair CMX8GX3M2A1600C11 4GB

Corsair CMX8GX3M2A1600C11 4GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology 76.D305G.D390B 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Kingston KHX2133C14/16G 16GB

Kingston KHX2133C14/16G 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Crucial Technology BLS16G4S26BFSD.16FD 16GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Apacer Technology 78.C1GMM.AUC0B 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB