RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

PNY Electronics PNY 2GB vs SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB 需要考虑的原因
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.8 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3146

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB RAM的比较

SpecTek Incorporated ?????????????????? 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CB8GU2400.C8D 8GB
Crucial Technology CB8GU2400.C8D 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M4K4000C19 8GB
Corsair CMK32GX4M4K4000C19 8GB
内存RAM
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-124.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
内存RAM
SK Hynix HMA851S6CJR6N-XN 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
Corsair CMT32GX4M4C3200C16 8GB
Corsair CMT32GX4M4C3200C16 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX4M2B4000C19 4GB
Corsair CMD8GX4M2B4000C19 4GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology AFLD48EH1P 8GB
Micron Technology AFLD48EH1P 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
Crucial Technology BLE4G4D32AEEA.K8FE 4GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Avant Technology W644GU44J2320NH 32GB
Avant Technology W644GU44J2320NH 32GB
内存RAM