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A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 13.7
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 66
    左右 -128% 更低的延时
  • 更快的写入速度，GB/s
    9.8 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 29
  • 读取速度，GB/s
    2,775.5 left arrow 13.7
  • 写入速度，GB/s
    1,557.9 left arrow 9.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2407

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB RAM的比较

Kingston 9905403-090.A01LF 4GB
SK Hynix HMA82GS6CJR8N-UH 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK16GX4M1C3000C16 16GB
Corsair CMK16GX4M1C3000C16 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
Crucial Technology BLS8G4D26BFSEK.8FBR 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
Crucial Technology CT8G4DFD824A.M16FF 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Kingston 9905744-006.A00G 16GB
Kingston 9905744-006.A00G 16GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
Colorful Technology Ltd BAPC08G2666D4S8 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD16GX3M2A1866C9 8GB
G Skill Intl F4-2800C15-8GVR 8GB
G Skill Intl F4-2800C15-8GVR 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston HP32D4U2S8MR-8 8GB
Kingston HP32D4U2S8MR-8 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
SK Hynix HMAA4GS6AJR8N-VK 32GB
内存RAM