A-DATA Technology DQVE1908 512MB vs ISD Technology Limited IM44GU48A30-GIIHM 4GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

ISD Technology Limited IM44GU48A30-GIIHM 4GB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

更快的读取速度，GB/s

2 14.9

测试中的平均数值

ISD Technology Limited IM44GU48A30-GIIHM 4GB

需要考虑的原因
ISD Technology Limited IM44GU48A30-GIIHM 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 66

左右 -187% 更低的延时
更快的写入速度，GB/s

9.3 1,557.9

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

ISD Technology Limited IM44GU48A30-GIIHM 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 23
读取速度，GB/s

2,775.5 14.9
写入速度，GB/s

1,557.9 9.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

382 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston ACR512X64D3S13C9G 4GB

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G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-4400C19-16GVK 16GB

G Skill Intl F4-4400C19-16GVK 16GB

Kingston 9965525-155.A00LF 8GB

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Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

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Elpida EBJ81UG8BBU0-GN-F 8GB

Kingston KF2666C16D4/8G 8GB

Kingston KF2666C16D4/8G 8GB