RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology DQVE1908 512MB
Kingston 9965600-012.A01G 16GB

A-DATA Technology DQVE1908 512MB vs Kingston 9965600-012.A01G 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Kingston 9965600-012.A01G 16GB

Kingston 9965600-012.A01G 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 11
    测试中的平均数值
Kingston 9965600-012.A01G 16GB 需要考虑的原因
Kingston 9965600-012.A01G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 66
    左右 -89% 更低的延时
  • 更快的写入速度，GB/s
    8.4 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Kingston 9965600-012.A01G 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 35
  • 读取速度，GB/s
    2,775.5 left arrow 11.0
  • 写入速度，GB/s
    1,557.9 left arrow 8.4
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2246

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Kingston 9965600-012.A01G 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M471A2K43CB1-CTCT 16GB
Samsung M471A2K43CB1-CTCT 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Mushkin 99[2/7/4]191F 4GB
Mushkin 99[2/7/4]191F 4GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
Crucial Technology CT16G4DFD8266.M16FD 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
SK Hynix HMA82GU6DJR8N-XN 16GB
SK Hynix HMA82GU6DJR8N-XN 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Samsung M393A2G40DB0-CPB 16GB
Samsung M393A2G40DB0-CPB 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M378A2K43EB1-CWE 16GB
Samsung M378A2K43EB1-CWE 16GB
内存RAM
Kingston KHX2800C14D4/8GX 8GB
Kingston KHX2800C14D4/8GX 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Corsair CMD64GX4M4C3000C15 16GB
Corsair CMD64GX4M4C3000C15 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
Crucial Technology BL8G32C16U4BL.M8FE 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
G Skill Intl F4-2400C15-8GVS 8GB
G Skill Intl F4-2400C15-8GVS 8GB
内存RAM