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A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB

A-DATA Technology DQVE1908 512MB vs Micron Technology 16ATF2G64HZ-3G2E1 16GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Micron Technology 16ATF2G64HZ-3G2E1 16GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16.7
    测试中的平均数值
Micron Technology 16ATF2G64HZ-3G2E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 66
    左右 -89% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 35
  • 读取速度，GB/s
    2,775.5 left arrow 16.7
  • 写入速度，GB/s
    1,557.9 left arrow 15.1
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    382 left arrow 3191

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Micron Technology 16ATF2G64HZ-3G2E1 16GB RAM的比较

PNY Electronics PNY 2GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Patriot Memory (PDP Systems) PSD34G16002 4GB
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内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLE8G4D30AEEA.K16FD 8GB
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内存RAM
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
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内存RAM
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Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Crucial Technology CT16G4SFRA32A.M16FR 16GB
内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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Kingston HP698651-154-MCN 8GB
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Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
SK Hynix HMT41GS6BFR8A-PB 8GB
SK Hynix HMT41GS6BFR8A-PB 8GB
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Corsair CMD16GX4M2E4000C19 8GB
内存RAM
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Samsung M378B5173BH0-CH9 4GB
Corsair CMD32GX4M4B3600C16 8GB
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内存RAM
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SK Hynix HMA82GS6CJR8N-VK 16GB
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内存RAM
Corsair CMZ16GX3M2A1600C10 8GB
Corsair CMZ16GX3M2A1600C10 8GB
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Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM