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Samsung M378B5173BH0-CH9 4GB
Corsair CMD32GX4M4B3600C16 8GB

Samsung M378B5173BH0-CH9 4GB vs Corsair CMD32GX4M4B3600C16 8GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
Corsair CMD32GX4M4B3600C16 8GB 需要考虑的原因
Corsair CMD32GX4M4B3600C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 23
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    18.7 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Corsair CMD32GX4M4B3600C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 20
  • 读取速度，GB/s
    13.4 left arrow 18.7
  • 写入速度，GB/s
    8.0 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 3652

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Corsair CMD32GX4M4B3600C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Corsair CMW64GX4M2D3000C16 32GB
Corsair CMW64GX4M2D3000C16 32GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905622-051.A00G 8GB
Kingston 9905622-051.A00G 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
G Skill Intl F4-3000C15-8GVR 8GB
G Skill Intl F4-3000C15-8GVR 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB
内存RAM
Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Corsair CMK32GX4M4C3333C16 8GB
Corsair CMK32GX4M4C3333C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Mushkin MB[A/B]4U240FFFF16G 16GB
Mushkin MB[A/B]4U240FFFF16G 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
Crucial Technology CT8G4DFS824A.M8FH 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Mushkin MR[ABC]4U320GJJM32G 32GB
Mushkin MR[ABC]4U320GJJM32G 32GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Apacer Technology 78.CAGR9.40C0B 8GB
Apacer Technology 78.CAGR9.40C0B 8GB
内存RAM