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A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF4G72PZ-2G1A1 32GB

A-DATA Technology DQVE1908 512MB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
Micron Technology 36ASF4G72PZ-2G1A1 32GB 需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 66
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    9.6 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.8 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 37
  • 读取速度，GB/s
    2,775.5 left arrow 9.6
  • 写入速度，GB/s
    1,557.9 left arrow 7.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2082

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
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Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
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内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C15-4GRKD 4GB
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Kingston 9965525-144.A00LF 8GB
Hewlett-Packard 7EH55AA# 8GB
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内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
Corsair CMU64GX4M4D3000C16 16GB
Corsair CMU64GX4M4D3000C16 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
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内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 99U5701-036.A00G 16GB
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内存RAM
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Kingston ACR16D3LS1NGG/2G 2GB
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Wilk Elektronik S.A. GR2666S464L19/16G 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
Crucial Technology BLS4G4D240FSC.8FBR2 4GB
内存RAM
Elpida EBJ41UF8BDW0-GN-F 4GB
Elpida EBJ41UF8BDW0-GN-F 4GB
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Samsung M47472K43DB1-CTD 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
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Corsair CMH32GX4M4E3200C16 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
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内存RAM