Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 37

左右 35% 更低的延时
更快的读取速度，GB/s

16 9.6

测试中的平均数值
更快的写入速度，GB/s

12.5 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Micron Technology 36ASF4G72PZ-2G1A1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 37
读取速度，GB/s

16.0 9.6
写入速度，GB/s

12.5 7.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2082

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Kingston 9905665-023.A00G 4GB

Kingston 9905665-023.A00G 4GB

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Samsung M378A4G43MB1-CTD 32GB

Samsung M378A4G43MB1-CTD 32GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Crucial Technology CT16G4DFD824A.M16FA 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMK64GX4M82800C14 8GB

Corsair CMK64GX4M82800C14 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Samsung M393B1K70EB0-CH9 8GB

Samsung M393B1K70EB0-CH9 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston 99U5402-030.A01LF 2GB

Kingston 99U5402-030.A01LF 2GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology CT16G4DFD8266.M16FJ 16GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Ramaxel Technology RMUA5090KE68H9F2133 4GB

Ramaxel Technology RMUA5090KE68H9F2133 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB