A-DATA Technology DQVE1908 512MB vs Micron Technology 72ASS8G72LZ-2G6D2 64GB

总分

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

差异规格评论

差异

A-DATA Technology DQVE1908 512MB

需要考虑的原因
A-DATA Technology DQVE1908 512MB

报告一个错误

Micron Technology 72ASS8G72LZ-2G6D2 64GB

需要考虑的原因
Micron Technology 72ASS8G72LZ-2G6D2 64GB

报告一个错误

低于PassMark测试中的延时，ns

38 66

左右 -74% 更低的延时
更快的读取速度，GB/s

8.7 2

测试中的平均数值
更快的写入速度，GB/s

7.0 1,557.9

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQVE1908 512MB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

66 38
读取速度，GB/s

2,775.5 8.7
写入速度，GB/s

1,557.9 7.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

382 1999

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

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SK Hynix DDR2 800 2G 2GB

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Kingston HP32D4U8S8HD-8X 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Crucial Technology CT16G4DFD824A.C16FBD 16GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 99U5713-001.A00G 4GB

Peak Electronics 256X64M-67E 2GB

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