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A-DATA Technology DQVE1908 512MB
Mushkin 99[2/7/4]202F 4GB

A-DATA Technology DQVE1908 512MB vs Mushkin 99[2/7/4]202F 4GB

总分
star star star star star
A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

总分
star star star star star
Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB

差异 规格 评论

差异

A-DATA Technology DQVE1908 512MB 需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 15
    测试中的平均数值
Mushkin 99[2/7/4]202F 4GB 需要考虑的原因
Mushkin 99[2/7/4]202F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 66
    左右 -164% 更低的延时
  • 更快的写入速度，GB/s
    11.1 left arrow 1,557.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Mushkin 99[2/7/4]202F 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    66 left arrow 25
  • 读取速度，GB/s
    2,775.5 left arrow 15.0
  • 写入速度，GB/s
    1,557.9 left arrow 11.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    382 left arrow 2892

A-DATA Technology DQVE1908 512MB RAM的比较

Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB

Mushkin 99[2/7/4]202F 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1K43DB2-CTD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Mushkin 99[2/7/4]202F 4GB
Mushkin 99[2/7/4]202F 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
Golden Empire CL19-19-19 D4-2666 4GB
Golden Empire CL19-19-19 D4-2666 4GB
内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
Micron Technology 18ASF1G72PDZ-2G6B1 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C16-4GVK 4GB
G Skill Intl F4-3200C16-4GVK 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston XRMWRN-MIE2 16GB
Kingston XRMWRN-MIE2 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2933C16-16GTZRX 16GB
G Skill Intl F4-2933C16-16GTZRX 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
内存RAM
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
Corsair CMW32GX4M4K4266C19 8GB
Corsair CMW32GX4M4K4266C19 8GB
内存RAM