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A-DATA Technology DQVE1908 512MB
Mushkin MRX4U300GJJM16G 16GB
比较
A-DATA Technology DQVE1908 512MB vs Mushkin MRX4U300GJJM16G 16GB
总分
A-DATA Technology DQVE1908 512MB
总分
Mushkin MRX4U300GJJM16G 16GB
差异
规格
评论
差异
需要考虑的原因
A-DATA Technology DQVE1908 512MB
报告一个错误
更快的读取速度,GB/s
2
19.7
测试中的平均数值
需要考虑的原因
Mushkin MRX4U300GJJM16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
66
左右 -136% 更低的延时
更快的写入速度,GB/s
16.8
1,557.9
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
A-DATA Technology DQVE1908 512MB
Mushkin MRX4U300GJJM16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
66
28
读取速度,GB/s
2,775.5
19.7
写入速度,GB/s
1,557.9
16.8
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
382
3927
A-DATA Technology DQVE1908 512MB RAM的比较
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Mushkin MRX4U300GJJM16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905469-143.A00LF 4GB
Kingston CBD24D4U7S8MA-8 8GB
A-DATA Technology DQVE1908 512MB
Mushkin MRX4U300GJJM16G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CM4X8GE2400C15K4 8GB
Kingston KHX1600C9D3/8G 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
TwinMOS 8DHE3MN8-HATP 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology D12.2326WH.001 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston CBD24D4S7D8MB-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C16-4GRK 4GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Corsair CMD16GX3M2A1866C9 8GB
Nanya Technology M471A5143EB1-CRC 4GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A2K43EB1-CWE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
报告一个错误
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