Samsung M395T2863QZ4-CF76 1GB vs Micron Technology 8ATF1G64AZ-3G2E1 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值
更快的写入速度，GB/s

2,404.5 12.4

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2E1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2E1 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 104

左右 -174% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 38
读取速度，GB/s

3,192.0 14.7
写入速度，GB/s

2,404.5 12.4
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2908

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G1601U1 4GB

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Corsair CMK128GX4M8B3000C16 16GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMU16GX4M2D3200C16 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Smart Modular SF464128CKHIWDFSEG 4GB

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Kingston HX316C10F/8 8GB

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SK Hynix HMT41GR7AFR4C-PB 8GB

Corsair CMX8GX3M2A1600C9 4GB

Corsair CMX8GX3M2A1600C9 4GB